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SGH13N60UFD
FEATURES
* High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.)
N-CHANNEL IGBT
TO-3P
APPLICATIONS
* AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast
C
G E
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGES IC
Characteristics
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25C Collector Current @ Tc = 100C
Rating 600 20 13 6.5 52 8 56 60 25 -55 ~ 150 -55 ~ 150 300
Units V V A A A A A W W C C C
ICM (1) IF IFM PD
Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100C Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25C Maximum Power Dissipation @Tc = 100C
Tj Tstg TL
Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. For Soldering Purposes, 1/8" from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
(c)1999 Fairchild Semiconductor Corporation
SGH13N60UFD
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25C,Unless Otherwise Specified) Symbol
BVCES VCES/ TJ VGE(th) ICES IGES VCE(sat)
N-CHANNEL IGBT
Characteristics
C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage
Test Conditions
VGE = 0V , IC = 250uA VGE = 0V , IC = 1mA
Min
600 -
Typ Max
0.6 -
Units
V V/C
IC = 6.5mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=6.5A, VGE = 15V Ic=13A, VGE = 15V VGE = 0V , f = 1MHz VCE = 30V
4.0 -
5.5 1.95 2.6 375 63 13 15 26 50 110 0.1 0.1 0.2 25 7 8 14
7.5 250 100 2.6 80 220 0.3 37 11 12 -
V uA nA V V pF pF pF nS nS nS nS mJ mJ mJ nC nC nC nH
Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le
Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance
VCC = 300V , IC = 6.5A VGE = 15V RG = 50 Inductive Load
-
Vcc = 300V VGE = 15V Ic = 6.5A Measured 5mm from PKG
-
SGH13N60UFD
ELECTRICAL CHARACTERISTICS (DIODE PART)
(Tc=25C,Unless Otherwise Specified) Symbol
VFM
N-CHANNEL IGBT
Characteristics
Diode Forward Voltage
Test Conditions
IF=8.0A Tc =25C Tc =100C
Min Min Typ
1.4 1.3 37 55 3.5 4.5 65 124
Max Units
1.7 55 5.0 138 nC A nS V
Trr
Diode Reverse Recovery Time
Tc =25C Tc =100C IF=8.0A, VR=200V -di/dt=200A/uS Tc =25C Tc =100C Tc =25C Tc =100C
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
THERMAL RESISTANCE
Symbol
RJC RJC RJA RCS
Characteristics
Junction-to-Case (IGBT) Junction-to-Case (DIODE) Junction-to-Ambient Case-to-Sink
Min
-
Typ
0.24
Max
2.0 3.5 40 -
Units
C/W C/W C/W C/W
SGH13N60UFD
12 Vcc = 300V Load Current : peak of square wave 50
N-CHANNEL IGBT
40 9 Tc = 25 Tc = 100 30 6
Load Current [A]
Ic [A]
20 10 Duty cycle : 50% Tc = 100 Power Dissipation = 14W 0 1 10 100 1000 0 2 4 6 8 10
3
0 0.1
Frequency [kHz]
Vce [V]
Fig.1 Typical Load Current vs. Frequency
Fig.2 Typical Output Characteristics
14
Vge = 15V
3.2
12
3.0
Ic = 13A
2.8 10 2.6 8
Max DC Current [A]
Vce(sat) [V]
2.4
6
2.2 4 2.0 Ic = 6.5A
2
1.8
0 25 50 75
1.6
Tc [ ]
100
125
150
20
40
60
80
Tc [
]
100
120
140
Fig.3 Maximum Collector Current vs. Case Temperature
Fig.4 Collector to Emitter Voltage vs. Case Temperature
SGH13N60UFD
10
N-CHANNEL IGBT
T hermal Response [Zthjc]
1
0 .5
0 .2 0 .1 0 .0 5 0 .1 0 .0 2 0 .0 1
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc
0 .0 0 1 0 .0 1 0 .1 1 10
s ingle puls e 0 .0 1 0 .0 0 0 0 1 0 .0 0 0 1
Rectangular Pulse Duration [sec]
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
600
18 Vcc = 300V Ic = 6.5A 16
500 14 400 Cies
12
Capacitance [pF]
300
V GE [V]
Coes Cres 1 10
10
8
200
6
4
100 2
0
0 0 5 10 15 20 25
Vce [V]
Qg [nC]
Fig.6 Typical Capacitance vs. Collector to Emitter Voltage
Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage
SGH13N60UFD
500
N-CHANNEL IGBT
1.8 Vcc = 300V Rg =50 Vge = 15V Ic =13A 1.4
Vcc = 300V Ic = 6.5A 1.6
400
Esw
1.2
Energy [uJ]
300
Energy [mJ]
Eon
1.0
0.8 Ic = 6.5A 0.6
200
Eoff
100
0.4 Ic = 3A 0.2
0
0
100
200
Rg [
+]
0.0 300 400 20 40
60
Tc [
]
80
100
Fig.8 Typical Switching Loss vs. Gate Resistance
0.7 Vcc = 300V Rg =50 Tc = 100 0.6
Fig.9 Typical Switching Loss vs. Case Temperature
100
Esw 0.5
Energy [mJ]
0.4
Ic [A]
Eoff 0.3 Eon 0.2
10
0.1
Safe Operating Area Vge = 20V, Tc = 100 1 4 6 8 10 12 1 10
100 1000
0.0
Ic [A]
Vce [V]
Fig.10 Typical Switching loss vs. Collector to Emitter Current
Fig.11 Turn-off SOA
SGH13N60UFD
100 100 VR = 200V IF = 8A 80
N-CHANNEL IGBT
Forward Current IF [A]
10 60 Tc = 100
Trr [ns]
Tc = 100 1 Tc = 25 40 Tc = 25 20 0.1 0 1 2 3 100 1000
Forward Voltage Drop V F [V]
-di/dt [A/us]
Fig.12 Typical Forward Voltage Drop vs. Forward Current
100 VR=200V IF=8A
Fig.13 Typical Reverse Recovery Time vs. di/dt
500 VR = 200V 450 400 350 Tc=100 300 IF = 8A
I rr - [A]
Tc = 100 10
Qrr [nC]
Tc = 25
250 200 Tc=25 150 100 50
1 100
-di/dt [A/us]
1000
0 100
-di/dt [A/us]
1000
Fig.14 Typical Reverse Recovery Current vs. di/dt
Fig.15 Typical Stored Charge vs. di/dt
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or (c) whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
LIFE SUPPORT POLICY Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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